Design and Investigation of DC and Microwave Characteristics of InGaP/InGaAs/GaAs Dual Channel Pseudomorphic HEMT (DC-PHEMT)
نویسندگان
چکیده
A InGaP/InGaAs/GaAs dual channel pseudomorphic HEMT (DCPHEMT) with interesting triple doped sheets having gate length 800nm is modeled and simulated by using 2-dimensional simulation package ATLAS from Silvaco. Different DC and microwave performances of the above device are analyzed and investigated to judge the potential of the device for highperformance digital device applications. Due to the schottky behavior of InGaP, good pinch-off and saturation characteristics, high drain saturation current, large and linear transconductance and excellent microwave characteristics are obtained. The studied dual channel HEMT with delta-doped sheet densities and proper layers; prove promise for electronic applications. Keywords— Dual channel, Pseudomorphic HEMT, δ-doped sheet, schottky behaviour, InGaP.
منابع مشابه
The simulation of high-performance InGaP/InGaAs/GaAs pseudomorphic HEMT
Heterostructure field-effect transistor design criteria are proposed in this study. GaAs pseudomorphic high electron mobility transistors (pHEMTs) are extensively applied to radar satellite receipt dispatcher antenna, and cell phone. Devices for various doped type and different material heterostructure are simulated and analyzed. The δ-doped InGaP/InGaAs/GaAs pHEMT with high density of two dime...
متن کاملFabrication and Characterization of 0.2μm InAlAs/InGaAs Metamorphic HEMT’s with Inverse Step- Graded InAlAs Buffer on GaAs Substrate
Metamorphic InAlAs/InGaAs HEMT are successfully demonstrated, exhibiting several advantages over conventional P-HEMT on GaAs and LM-HEMT on InP substrate. The strainrelaxed metamorphic structure is grown by MBE on the GaAs substrate with the inverse-step graded InAlAs metamorphic buffer. The device with 40% indium content shows the better characteristics than the device with 53% indium content....
متن کاملHigh-Reliability Deep Submicron GaAs Pseudomorphic HEMT MMIC Amplifiers
High-reliability performance of a Q-band MMIC amplifier fabricated using TRW’s 0.1 μm production AlGaAs/GaAs HEMT process technology is reported. Operating at an accelerated life test conditions of Vds=4.2V and Ids=150mA/mm, two-stage balanced amplifiers were lifetested at threetemperatures (Ta=255 C, Ta=270 C, and Ta=285 C) in air ambient. The activation energy (Ea) is as high as 1.7 eV, achie...
متن کاملEffect of Li Ion Irradiation on Reliability of AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor
AlGaAs/InGaAs/GaAs pHEMT (pseudomorphic high electron mobility transistors) materials and devices have been studied with 20MeV Li ions irradiation at two different fluences. The structural and electrical characteristics have been studied and compared before and after the irradiation. It has been found that with the irradiation FWHM of the material not changes as confirmed with x-ray rocking cur...
متن کاملLarge-signal model of AlGaAs P-HEMT under optical illumination
As an extension of our previous works in the optical-microwave interaction field, this paper shows the result of the research on large signal dynamic behavior (Pulsed I/V curves) of AlGaAs P-HEMT (pseudomorphic high electron mobility transistor) devices, in the overall I/V plane, when the incident optical input power is changed. A complete bias and optical power dependent of the large signal mo...
متن کامل